| 摘要 |
This solid-state image pickup apparatus is provided with a semiconductor substrate (201), a pixel section (250) formed on the semiconductor substrate (201), and a peripheral circuit section (260) formed on the semiconductor substrate (201), said peripheral circuit section being at the periphery of the pixel section (250). The pixel section (250) is provided with a photoelectric conversion film (217), which generates charges by photoelectrically converting inputted light, and an n-type diffusion layer (205) for holding the charges. The peripheral circuit section (260) is provided with an NchMOS transistor (225) that is provided with a gate electrode (204D) and two n-type source and drain diffusion layers (236), and the impurity concentration of the two n-type source and drain diffusion layers (236) is higher than that of the n-type diffusion layer (205). |
