| 摘要 |
<p>The pixel cell array (100) of this solid-state imaging device is provided with a signal line (121 and 122) disposed for each column; pixel cells (101) belong to a first group or a second group by row, and are provided with a photoelectric conversion film (105), a wiring FD (120) that accumulates signal charge, and an amplifying transistor (107) that outputs a voltage that is in accordance with signal charge; the pixel cells (101) of the first group are further provided with a selection transistor (108) that outputs the output voltage of the amplifying transistor (107) to signal line (121); the pixel cells (101) of the second group are further provided with a selection transistor (108) that outputs the output voltage of the amplifying transistor (107) to signal line (122); signal line (121) is disposed between the wiring FD (120) of the first group and signal line (122); and signal line (122) is disposed between the wiring FD (120) of the second group and signal line (121).</p> |
