发明名称 PROCESS CHAMBER AND SUBSTRATE PROCESSING METHOD
摘要 <p>The present invention relates to a process chamber and to a substrate processing method. The process chamber according to one embodiment of the present invention includes: a boat in which a plurality of substrates are stacked vertically apart from each other; a lower layer chamber housing having a first inner space which is inside the internal space of the boat; an upper layer chamber housing positioned in the upper layer of the lower layer chamber housing and having a second inner space which is inside the internal space of the boat; a process gas injection means which horizontally injects different process gases individually between the substrates of the boat which are stacked apart from each other from the wall body of the upper layer chamber housing; a process gas discharge means which discharges the gas in the inner space of the upper layer chamber housing to the outside; a boat driving means which raises and lowers the boat to and from the first inner space of the lower layer chamber housing and the second inner space of the upper layer chamber housing and rotates the boat; and a substrate transfer gate which penetrates one side wall of the lower layer chamber housing.</p>
申请公布号 WO2014003298(A1) 申请公布日期 2014.01.03
申请号 WO2013KR02751 申请日期 2013.04.03
申请人 INOCT CO., LTD 发明人 YOON, SONG KEUN;LEE, JONG HWA;KO, HYEOG JOON;LEE, JANG HYEOK
分类号 H01L21/205;H01L21/02;H01L21/3065 主分类号 H01L21/205
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