| 摘要 |
<p>A nitride semiconductor light-emitting element is provided with: a semiconductor layered body (50) which comprises a group III nitride semiconductor, and which has a light-emission end surface; and a multilayer protective film (30) which is formed so as to cover the light-emission end surface in the semiconductor layered body (50), and which has a plurality of insulating films. The multilayer protective film (30) has a first protective film (31), and a second protective film (32) which covers the first protective film (31). The first protective film (31) is a crystalline film which comprises an aluminium-containing nitride, and which includes a crystallization region in at least a portion thereof. The second protective film (32) is a crystalline film which comprises an aluminium-containing oxide, and which includes a crystallization region in at least a portion thereof.</p> |
