| 摘要 |
<p>Provided is an etchant solution for a copper conductor of a TFT array substrate, comprising: a primary oxidant, a secondary oxidant, a chelating agent, an inhibitor, and an additive; the primary oxidant is hydrogen peroxide; the secondary oxidant is phosphoric acid, sulfuric acid, and nitric acid; the chelating agent is an amino compound; the inhibitor is an amino azole compound or a carboxylic acid compound; and the additive is an amine compound containing an amino nitrogen atom and a carboxyl oxygen coordination atom. The etchant solution improves the feature of a short processing window in an etchant solution for a copper conductor, reduces the difficulty of engineering control, increases stability in engineering production and output yield; improves the shelf-time stability, with the etch stability being also maintained during the later shelf-time period; increases the use life (>=5000 ppm), with no significant narrowing of the process window occurring in the later period of the manufacturing; and ensures the performance being relatively stable.</p> |
