LIGHT EMITTING DIODE

摘要

Disclosed are a method for manufacturing a light emitting diode including a reflective film by using an intermediate layer and the light emitting diode manufactured by the same method. The method for manufacturing the light emitting diode is for manufacturing the light emitting diode including a reflective layer for reflecting the light generated at an active layer positioned between an n-type semiconductor layer and a p-type semiconductor layer, comprising: a step of forming a first reflective film layer; a step of forming an intermediate layer on the first reflective film layer wherein the intermediate layer is formed by components different from those of the first reflective film layer; and a second reflective film layer formed on the intermediate layer. The intermediate layer is made of a metal component diffused into the second reflective film layer at heat treatment. If the intermediate layer made of the metal component diffused into the reflective film layer is inserted into the reflective film layers, thermal stability of the reflective film can be enhanced. [Reference numerals] (110) First reflective film layer; (120) Intermediate layer; (130) Second reflective film layer; (200) Semiconductor layer