| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A collector layer (19) is formed of silicon carbide having a first conductivity type. A switching element (80) is provided on the collector layer (19). The switching element (80) includes a junction gate (32) for controlling a channel (CH) having a second conductivity type different from the first conductivity type.</p> |
| 申请公布号 |
WO2014002597(A1) |
申请公布日期 |
2014.01.03 |
| 申请号 |
WO2013JP61919 |
申请日期 |
2013.04.23 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HAYASHI, HIDEKI |
| 分类号 |
H01L21/337;H01L21/338;H01L27/095;H01L27/098;H01L29/808;H01L29/812 |
主分类号 |
H01L21/337 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
