发明名称 |
METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION |
摘要 |
A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer. |
申请公布号 |
US2014004705(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213711999 |
申请日期 |
2012.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG YOOL;LEE SUK-JOO;LEE JUNG-HYEON;YI SHI-YONG |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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