发明名称 PROCESSING MULTILAYER SEMICONDUCTORS WITH MULTIPLE HEAT SOURCES
摘要 A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.
申请公布号 US2014003800(A1) 申请公布日期 2014.01.02
申请号 US201314014947 申请日期 2013.08.30
申请人 APPLIED MATERIALS, INC. 发明人 RAMAMURTHY SUNDAR;HEGEDUS ANDREAS G.;THAKUR RANDHIR P.S.
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址