发明名称 |
Method Of Manufacturing Gallium Nitride Substrate And Gallium Nitride Substrate Manufactured By The Same |
摘要 |
A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured by the same. The method includes the steps of growing a GaN film on a base substrate and separating the base substrate from the GaN film. The step of growing the GaN film includes forming pits in the GaN film, the pits inducing an inversion domain boundary to be formed inside the GaN film. The GaN substrate can have a predetermined thickness with which it can be handled during layer transfer (LT) processing, and the warping of the GaN substrate can be minimized, thereby preventing cracks due to warping. |
申请公布号 |
US2014001484(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201313927334 |
申请日期 |
2013.06.26 |
申请人 |
SAMSUNG CORNING PRECISION MATERIALS CO. LTD. |
发明人 |
LIM SUNGKEUN;PARK BOIK;WOO KWANGJE;KIM WOORIHAN;KIM JOON HOI;PARK CHEOLMIN;BAE JUNYOUNG;LEE DONGYONG;LEE WONJO;CHOI JUNSUNG |
分类号 |
H01L21/02;H01L33/00 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|