发明名称 Voids in Interconnect Structures and Methods for Forming the Same
摘要 A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.
申请公布号 US2014001597(A1) 申请公布日期 2014.01.02
申请号 US201213539121 申请日期 2012.06.29
申请人 HUANG JIUN-JIE;WANG LING-SUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG JIUN-JIE;WANG LING-SUNG
分类号 H01L29/02;H01L21/02 主分类号 H01L29/02
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