发明名称 |
ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS |
摘要 |
In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process. |
申请公布号 |
US2014004688(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201314020285 |
申请日期 |
2013.09.06 |
申请人 |
NISSIN ION EQUIPMENT CO., LTD |
发明人 |
ASAI HIROFUMI;HASHINO YOSHIKAZU |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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