| 摘要 |
Disclosed herein are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof. Opening parts are formed in a mask layer partially shielding a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening part, and second n-type nitride semiconductor layers are grown based on the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening part and is formed in a hexagonal pyramid shape. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Further, an area of the photoactive layer is increased, such that photoelectric conversion efficiency is improved. |
