发明名称 MASK SUBSTRATE INSPECTION METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To ensure quick defective inspection when even fine defects on a mask substrate are desired to be detectable in the mask substrate which becomes an origin of an exposure mask. <P>SOLUTION: When the defective inspection is performed to the mask substrate which becomes the origin of the mask of exposure, an exposure region 13 is extracted after the mask pattern is formed from pattern data concerning the form of a mask pattern to be formed on the mask substrate, and the defective inspection must be performed only to a part before screening substrate corresponding to an exposure region 13. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004363203(A) 申请公布日期 2004.12.24
申请号 JP20030157470 申请日期 2003.06.03
申请人 SONY CORP 发明人 IWASE KAZUYA
分类号 G03F1/20;G03F1/68;G03F1/84;H01L21/027;(IPC1-7):H01L21/027;G03F1/16;G03F1/08 主分类号 G03F1/20
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