发明名称 |
Silicide Process Using OD Spacers |
摘要 |
A device includes a semiconductor substrate including an active region. The active region includes a first sidewall. An isolation region extends from a top surface of the semiconductor substrate into the semiconductor substrate. The isolation region has a second sidewall, wherein a lower portion of the first sidewall joins a lower portion of the second sidewall to form an interface. A dielectric spacer is disposed on an upper portion of the first sidewall. A silicide region is over and contacting the active region. A sidewall of the silicide region contacts the dielectric spacer, and the dielectric spacer has a top surface substantially lower than a top surface of the silicide region. |
申请公布号 |
US2014001529(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213538998 |
申请日期 |
2012.06.29 |
申请人 |
HSIEH PING-PANG;LEE CHIH-MING;CHEN YU-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH PING-PANG;LEE CHIH-MING;CHEN YU-JEN |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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