| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide compositions and methods for forming patterned semiconductors and patterned semiconductor thin films and/or to provide structures. <P>SOLUTION: The composition comprises passivated semiconductor nanoparticles and at least one of first Group IVA compounds represented by the formula (AH<SB>X</SB>)<SB>n</SB>wherein A is independently Si or Ge and/or second Group IVA compounds represented by the formula (AH<SB>X</SB>)<SB>m</SB>(AH<SB>y</SB>R<SB>z-y</SB>)<SB>p</SB>(ZR'<SB>w</SB>)<SB>q</SB>, wherein each A is independently Si or Ge, each R is independently alkyl, aryl, aralkyl, halogen, BH<SB>s</SB>R"<SB>2-s</SB>, PH<SB>s</SB>R"<SB>2-s</SB>, AsH<SB>s</SB>R"<SB>2-s</SB>, or AH<SB>t</SB>R"<SB>3-t</SB>, and R" is alkyl, aryl, aralkyl, halogen or AH<SB>3</SB>, and Z is selected from a group of B(boron), P(phosphorus), and As(arsenic), and R' is R or H(hydrogen). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
