Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption

摘要

A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp circuit is connected to first and second supply levels, a first level used for setting a program inhibit level on bit lines and a second level used for pre-charging bit lines for sensing operation. Outside of a data latch, the sense amp can employ only NMOS transistors. The arrangement of the circuit also allows for the discharging the bit line at the same time as transfers the sensing result out to other latches.