| 摘要 |
A method for processing a silicon wafer is provided, the method including allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side, wherein the apertures arranged in the line includes a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant, and wherein the first aperture and the second aperture are subjected to different processes after being formed. |
