发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME |
摘要 |
Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer. |
申请公布号 |
US2014001606(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201314020021 |
申请日期 |
2013.09.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM HA-JIN;JUNG HYUNG-SUK;CHOI YUN-KI |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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