| 摘要 |
Provided is a perpendicularly magnetized magnetic tunnel junction device including at least one multi-layer. The multi-layer includes a first metal oxide layer, a first ferromagnetic layer, a first modified layer and a second ferromagnetic layer. The first ferromagnetic layer is located on the first metal oxide layer, and the second ferromagnetic layer is located on the first ferromagnetic layer. The first modified layer is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. |
