| 发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating a semiconductor device includes forming a metal layer over a substrate, forming a capping layer over the metal layer, and densifying the metal layer through a heat treatment. |
| 申请公布号 |
US2014004679(A1) |
申请公布日期 |
2014.01.02 |
| 申请号 |
US201213617305 |
申请日期 |
2012.09.14 |
| 申请人 |
KIM BEOM-YONG;JI YUN-HYUCK;LEE SEUNG-MI |
发明人 |
KIM BEOM-YONG;JI YUN-HYUCK;LEE SEUNG-MI |
| 分类号 |
H01L49/02;H01L21/768;H01L29/66 |
主分类号 |
H01L49/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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