发明名称 |
NAND Memory Device Containing Nanodots and Method of Making Thereof |
摘要 |
A method of fabricating a memory device includes providing multiple coatings of nanodots on a tunnel dielectric layer to form a floating gate layer having a high nanodot density. The memory device may have a nanodot-containing floating gate layer with a density greater than 4×1012 dots/cm2. Further methods include forming an oxidation barrier layer, such as a silicon nitride shell, over a surface of the nanodots, and depositing a dielectric material over the nanodots to form a floating gate layer. |
申请公布号 |
US2014001533(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213708587 |
申请日期 |
2012.12.07 |
申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
PURAYATH VINOD;SAMACHISA GEORGE;MATAMIS GEORGE;KAI JAMES;ZHANG YUAN |
分类号 |
H01L29/788;H01L29/66 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|