| 摘要 |
A nonvolatile memory device including a plurality of memory cells arranged at a region where word lines and bit lines cross each other; a plurality of data read/write circuits divided into a plurality of groups, and configured to store data in the memory cells or read data stored in the memory cells, according to an operation mode; a pass/fail check unit configured to determine a pass/fail of an operation for each of the data read/write circuit groups; and a current sensing check unit configured to selectively perform a fail bit count operation on the data read/write circuit groups, according to a determination result of the pass/fail check unit. |
