发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 To improve reliability of a semiconductor device, in a flip-chip bonding step, a solder material that is attached to a tip end surface of a projecting electrode in advance and a solder material that is applied in advance over a terminal (bonding lead) are heated and thereby integrated and electrically connected to each other. The terminal includes a wide part (a first portion) with a first width W1 and a narrow part (a second portion) with a second width W2. When the solder material is heated, the thickness of the solder material arranged over the narrow part becomes smaller than the thickness of the solder material arranged in the wide part. Then, in the flip-chip bonding step, a projecting electrode is arranged over the narrow part and bonded onto the narrow part. Thus, the amount of protrusion of the solder material can be reduced.
申请公布号 US2014004661(A1) 申请公布日期 2014.01.02
申请号 US201314013304 申请日期 2013.08.29
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KONNO JUMPEI;NISHITA TAKAFUMI;KINOSHITA NOBUHIRO;HASEGAWA KAZUNORI;SUGIYAMA MICHIAKI
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项
地址