| 摘要 |
Disclosed is apparatus and method for decreasing diffusive damage effects to a primary structure ( 406, 506 ) within a semiconductor device ( 400, 500 ). The device typically comprises a first interconnect ( 402, 502 ), and a second interconnect ( 404, 504 ). The primary structure is disposed between the first and second interconnects to electrically intercouple them. An active diffusion volume ( 410, 514 ) is determined, within which the primary structure is located. A buffer structure ( 408, 508 ) is disposed upon the first interconnect in proximity to the primary structure and adapted to buffer the primary via structure from diffusive voiding occurring at a contact point between the primary structure and the first interconnect.
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