| 摘要 |
A semiconductor layer capable of providing a GaN epitaxial layer of high product quality. This semiconductor layer comprises beta-Ga2O3 substrate (1) consisting of beta-Ga2O3 single crystal, GaN layer (2) formed by nitriding the surface of the beta-Ga2O 3 substrate (1) and GaN growth layer (3) formed by epitaxial growth on the GaN layer (2) according to the MOCVD technique. The lattice constant of the GaN layer (2) agrees with that of the GaN growth layer (3), and the GaN growth layer (3) grows taking over the high crystallinity of the GaN layer (2) with the result that the GaN growth layer (3) of high crystallinity is obtained.
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