发明名称 |
CHARGE STORAGE APPARATUS, SYSTEMS AND METHODS |
摘要 |
Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric. A portion of the tier of semiconductor material exposed by the opening is processed so that the portion is doped differently than the remaining semiconductor material in the tier. At least substantially all of the remaining semiconductor material of the tier is removed, leaving the differently doped portion of the tier of semiconductor material as a charge storage structure. A tunneling dielectric is formed on a first surface of the charge storage structure and an intergate dielectric is formed on a second surface of the charge storage structure. Additional embodiments are also described. |
申请公布号 |
EP2678882(A2) |
申请公布日期 |
2014.01.01 |
申请号 |
EP20120749034 |
申请日期 |
2012.02.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG, SANH D.;ZAHURAK, JOHN K. |
分类号 |
H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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