| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device which can suppress the deterioration of reliability of a through-hole. <P>SOLUTION: The semiconductor device 100 comprises a semiconductor chip 10; the through-hole 105, .... The semiconductor chip 10 has the surface 10a and the rear surface 10b. The surface 10a extends substantially perpendicularly to a first axis CA on which an element is formed. The first axis CA passes through a volume center VC. The rear surface 10b extends substantially perpendicularly to the first axis CA, which is an opposite side surface to the surface 10a. The through-holes 105, ... are formed penetrating the chip so as to approach the first axis CA as it goes from the surface 10a to the rear surface 10b in the vicinity of the periphery of the semiconductor chip 10. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
