| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for understanding a condition of a CMP device which accelerates a polishing rate of an insulating film of a test substrate, and can accurately understand a condition of the CMP device and a state change; and to provide the CMP device. <P>SOLUTION: The CMP device supplies a polishing agent 101 to a polishing face of a polishing table 1 from a polishing agent supply nozzle 5, presses a substrate 4 held by a polishing head 3 to the polishing face and polishes the substrate 4 by a relative movement between the polishing face and the substrate 4. The CMP device comprises a slurry tank 7 for receiving a ceria slurry and a plurality of additives tanks 6, 8 for storing pure water or additives. With this arrangement, the pure water or additives are added from one or a plurality of additives tanks to the ceria slurry to be supplied from the slurry tank 7 to the polishing agent supply nozzle 5 to be mixed to obtain the polishing agent, which is supplied onto the polishing agent of the polishing table 1. The CMP device changes a composition of the polishing agent when the test substrate is polished for understanding a condition at the leading time of the device, and a composition of the polishing agent when a product is polished in polishing a product substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
