| 摘要 |
On a p-type conductive light absorption layer (130) provided by a chalcopyrite structure compound that is layered bridging a pair of backside electrode layers (120) provided on a side of a glass substrate (110), a light-transmissive n-type buffer layer (140) that forms a p-n junction with the light absorption layer (130) is layered. A light-transmissive transparent electrode layer (160) is layered on the buffer layer (140) to extend from a side of the light absorption layer (130) and the buffer layer (140) to one of the pair of backside electrode layers (120). The transparent electrode layer (160) is formed in an amorphous film containing indium oxide and zinc oxide as primary components, the transparent electrode layer (160) exhibiting a film stress of ±1 × 10 9 Pa or less. A photovoltaic element can be favorably processed without causing cracking and damage even by an easily processable mechanical scribing, so that productivity can be enhanced and yield rate can be improved. |
