Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof

摘要

Embodiments of semiconductor devices (200, 800) and driver circuits (110) include a semiconductor substrate (210, 810) having a first conductivity type, an isolation structure (including a sinker region (222, 822) and a buried layer (220, 820)), an active device within a portion (230, 830) of the substrate contained by the isolation structure, and a resistor circuit (160). The buried layer (220, 820) is positioned below the top substrate surface (212, 812), and has a second conductivity type. The sinker region (222, 822) extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a current carrying region (236, 238, 836, 838) (e.g., a source region of the first conductivity type and/or a drain region of the second conductivity type), and the resistor circuit (160) is connected between the isolation structure and the current carrying region. The resistor circuit may include one or more resistor networks (446, 546, 646, 746, 1046, 1146, 1246, 1346) and, optionally, a Schottky diode (410, 510, 1010, 1110) and/or one or more PN diode(s) (610, 710, 1210, 1310) in series and/or parallel with the resistor network(s).