发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD |
摘要 |
A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10−8torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface. |
申请公布号 |
EP2678881(A1) |
申请公布日期 |
2014.01.01 |
申请号 |
EP20120708921 |
申请日期 |
2012.02.24 |
申请人 |
UCL BUSINESS PLC |
发明人 |
LIU, HUIYUN;SEEDS, ALWYN, JOHN;POZZI, FRANCESCA |
分类号 |
H01L21/02;H01L33/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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