发明名称 |
DRIVER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE FOR DECREASING LEAKAGE CURRENT |
摘要 |
A driver circuit of a semiconductor memory device for decreasing a leakage current is provided to reduce the intensity of a GIDL current in a standby mode, by decreasing the level of a voltage supplied in the standby mode to be lower than the level of a voltage supplied in an active mode. According to a driver circuit of a semiconductor memory device, a first driver circuit generates a first driving signal based on a first row address signal in response to a mode control signal. A second driver circuit includes a first transistor having a first port receiving the first driving signal and a second port, and generates a second driving signal on the basis of the first driving signal and a second row address signal. The first driver circuit drives the first driving signal with a first power supply voltage or a second power supply voltage in a first mode, and drives the first driving signal with a third power supply voltage in a second mode. The third power supply voltage is lower than the first power supply voltage and is higher than the second power supply voltage.
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申请公布号 |
KR100801059(B1) |
申请公布日期 |
2008.02.04 |
申请号 |
KR20060073103 |
申请日期 |
2006.08.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JONG HYUN;LEE, KYU CHAN;YIM, SUNG MIN;SHIN, DONG HAK |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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主权项 |
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