| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To facilitate a manufacturing process by reducing the number of write lines. <P>SOLUTION: A semiconductor memory includes: word lines WL extending in a first direction; first, second and third bit lines BL1, BL2, BL3 extending in a second direction; a first cell unit Cu1 connected between the first and second bit lines BL1, BL2; a second cell unit Cu2 connected between the first and third bit lines BL1, BL3; and a controller CNT which makes the word lines WL active and executes write to a first resistance change element R1 in such a state that potentials of the first and third bit lines BL1, BL3 are made equal to each other, and which makes the word lines WL active and executes write to a second resistance change element R2 in such a state that potentials of the first and second bit lines BL1, BL2 are made equal to each other. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
