发明名称 FLASH MEMORY ELEMENT AND ITS READING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory element capable of performing an accurate data reading operation by uniforming the loading time of the sensing nodes of the page buffers and eliminating a coupling capacitance among sensing node wirings. <P>SOLUTION: In a page buffer of the flash memory element, a transmitting unit is disposed between a bit line selecting unit and a sensing node wiring to generate a space therebetween, and the lengths of the sensing node wirings are configured to be identical across many page buffers. The wirings of the sensing nodes are disposed on separate levels so as not to be adjacent to each other. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008090998(A) 申请公布日期 2008.04.17
申请号 JP20070173211 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR INC 发明人 PARK JIN SU;BAE GI HYUN;YANG JOONG SEOB
分类号 G11C16/06;G11C16/02 主分类号 G11C16/06
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