发明名称 |
Capacitor with single crystal tantalum oxide layer and method for fabricating the same |
摘要 |
A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a storage node formed over the inter-layer insulation layer and filled into the contact hole; a tantalum oxide layer of single crystal formed over the storage node; and a plate formed over the tantalum oxide layer.
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申请公布号 |
US7364979(B2) |
申请公布日期 |
2008.04.29 |
申请号 |
US20060411568 |
申请日期 |
2006.04.25 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM DO-HYUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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