发明名称 Capacitor with single crystal tantalum oxide layer and method for fabricating the same
摘要 A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a storage node formed over the inter-layer insulation layer and filled into the contact hole; a tantalum oxide layer of single crystal formed over the storage node; and a plate formed over the tantalum oxide layer.
申请公布号 US7364979(B2) 申请公布日期 2008.04.29
申请号 US20060411568 申请日期 2006.04.25
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 KIM DO-HYUNG
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址