| 摘要 |
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H<SUB>2 </SUB>attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support plate in an HDP-CVD system is adjusted in the vertical direction, whereby a second HDP-CVD oxide film is deposited so that voids are formed between aluminum interconnections at lower positions than the height of the aluminum interconnections.
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