| 摘要 |
<p>A semiconductor device having an MOS transistor with a recessed channel, and a method of fabricating the same are provided to increase the effective channel length of a transistor by forming a recess channel structure between source and drain regions, thereby improving on-current characteristic of the transistor. A device isolation layer(120) defining an active region(105a) is formed on a semiconductor substrate(100). A liner(110) is inserted between the active region and the device isolation layer. Gate trenches(125a,125b) are formed across the active region. A gate electrode(125') filling the gate trenches is located across the active region. A liner recess region(130) is located at the lower part of the gate electrode, and between the active region and the device isolation layer. A gate electrode extension part(130') is formed inside the liner recess region, and contacted with the gate electrode. Side walls of the active region are exposed by the liner recess region.</p> |
