METHOD OF FORMING METAL CONTACTS IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal contact of a semiconductor device is provided to reduce contact resistance of a metal contact layer by forming a tungsten layer with a source gas including silicon. A substrate including an insulating layer is prepared(S10). A contact hole for exposing a part of a substrate is formed(S20). A first tungsten layer is formed on a surface of the contact hole by using a source gas including silicon(S30). A tungsten nitride layer is formed on a surface of the tungsten layer(S40). A second tungsten layer is formed on a surface of the tungsten nitride layer in order to bury the contact hole(S50). The source gas including the silicon includes one of SiH4 gas, Si2H6 gas, and Si3H8 gas or a combination of the SiH4 gas, Si2H6 gas, and Si3H8 gas.