| 发明名称 |
BST integration using thin buffer layer grown directly onto SiO2/Si substrate |
| 摘要 |
A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.
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| 申请公布号 |
US7402853(B2) |
申请公布日期 |
2008.07.22 |
| 申请号 |
US20050230100 |
申请日期 |
2005.09.19 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
KIM IL-DOO;AVRAHAMI YTSHAK;TULLER HARRY L. |
| 分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
| 代理机构 |
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