发明名称 |
Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
摘要 |
An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.
|
申请公布号 |
US7402843(B2) |
申请公布日期 |
2008.07.22 |
申请号 |
US20040000207 |
申请日期 |
2004.12.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ONISHI TOSHIKAZU |
分类号 |
H01L31/0328;H01L21/20;H01L29/201;H01L29/205;H01L31/0336;H01L33/30 |
主分类号 |
H01L31/0328 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|