发明名称 |
Method for producing semiconductor optical device |
摘要 |
A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching. |
申请公布号 |
US8617969(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US201213530154 |
申请日期 |
2012.06.22 |
申请人 |
SAKURAI KENJI;YAGI HIDEKI;YOSHINAGA HIROYUKI;SUMITOMO ELECTRIC INDUSTRIES LTD. |
发明人 |
SAKURAI KENJI;YAGI HIDEKI;YOSHINAGA HIROYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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