发明名称 Method for producing semiconductor optical device
摘要 A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.
申请公布号 US8617969(B2) 申请公布日期 2013.12.31
申请号 US201213530154 申请日期 2012.06.22
申请人 SAKURAI KENJI;YAGI HIDEKI;YOSHINAGA HIROYUKI;SUMITOMO ELECTRIC INDUSTRIES LTD. 发明人 SAKURAI KENJI;YAGI HIDEKI;YOSHINAGA HIROYUKI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址