发明名称 Non-volatile semiconductor memory having multiple external power supplies
摘要 A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
申请公布号 US8619473(B2) 申请公布日期 2013.12.31
申请号 US201213649403 申请日期 2012.10.11
申请人 MOSAID TECHNOLOGIES INCORPORATED 发明人 KIM JIN-KI;GILLINGHAM PETER
分类号 G11C16/00 主分类号 G11C16/00
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