发明名称 Methods and apparatus of stacking DRAMs
摘要 Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.
申请公布号 US8619452(B2) 申请公布日期 2013.12.31
申请号 US20060515223 申请日期 2006.09.01
申请人 RAJAN SURESH N.;SMITH MICHAEL J. S.;WANG DAVID T;GOOGLE INC. 发明人 RAJAN SURESH N.;SMITH MICHAEL J. S.;WANG DAVID T
分类号 G11C5/02 主分类号 G11C5/02
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