| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a phenomenon that a threshold voltage is decreased to a predetermined value or lower by compensating for dopants for adjusting a threshold voltage that is lost at the edge of an active region by a segregation phenomenon at the edge of an active region in contact with an isolation layer. An isolation layer(22) for defining an active region is formed in a substrate(21). An ion implantation buffer layer(26) is formed on the substrate. The ion implantation buffer layer is selectively etched at the edge of the active region in contact with the isolation layer. Dopants for adjusting a threshold voltage are ion-implanted. An annealing is performed to activate the ion-implanted dopants.
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