发明名称 |
Back-illuminated CMOS image sensors |
摘要 |
A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer. |
申请公布号 |
US8618458(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US20080266764 |
申请日期 |
2008.11.07 |
申请人 |
MCCARTEN JOHN P.;SUMMA JOSEPH R.;TIVARUS CRISTIAN A.;ANDERSON TODD J.;STEVENS ERIC G.;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
MCCARTEN JOHN P.;SUMMA JOSEPH R.;TIVARUS CRISTIAN A.;ANDERSON TODD J.;STEVENS ERIC G. |
分类号 |
H01L27/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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