| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the generation of leakage current in an operating state of elements by preventing the formation of a landing plug. A gate(104) is formed on a semiconductor substrate(100) including a cell region(C), a dummy cell region(D), and a peripheral circuit region(P). A first spacer insulating layer(106a) and a gate isolation layer are formed on the gate. The gate isolation layer is removed from the dummy cell region and the peripheral circuit region. A second spacer insulating layer(106b) is formed on an entire surface of the semiconductor substrate. The gate is exposed by planarizing the second spacer insulating layer and the gate isolation layer. A landing plug contact hole is formed by performing an etch process using a landing plug contact mask. A landing plug(116) is formed by burying a conductive layer into the landing plug contact hole.
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