发明名称 Self-biased voltage regulation circuitry for memory
摘要 Integrated circuits with voltage regulation circuitry are provided. Voltage regulation circuitry may be powered by a core supply voltage and may not have a bandgap reference circuit. Voltage regulation circuitry may have an error amplifier in a negative feedback configuration. The error amplifier may have inputs connected to reference voltages generated by resistor strings. The resistor strings may be trimmable to provide a desired negative voltage. The desired negative voltage may be fed to the gates of transistors to help reduce leakage. The desired negative voltage may be have improved tolerance to process-voltage-temperature variations and may improve the reliability of transistors.
申请公布号 US8618786(B1) 申请公布日期 2013.12.31
申请号 US20090551289 申请日期 2009.08.31
申请人 PERISETTY SRINIVAS;SHERIGAR ARVIND;ALTERA CORPORATION 发明人 PERISETTY SRINIVAS;SHERIGAR ARVIND
分类号 G05F3/16;G11C5/14;G11C11/00 主分类号 G05F3/16
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