发明名称 FLASH MEMORY DEVICE HAVING THREE-DIMENSIONAL STRUCTURE WITH IMPROVED DRIVING SYSTEM, AND METHOD OF DRIVING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory device capable of improving an integrating degree and performance for driving the device, and a method of driving the same. <P>SOLUTION: This flash memory device is equipped with a plurality of layers each arranged stacked vertically with a plurality of layers includes a plurality of memory cells, and a row decoder which is electrically coupled to the plurality of layers and supplies a wordline voltage to the plurality of layers. The device is characterized in that memory cells provided in at least two layers out of the plurality of layers are set in one block and the wordlines associated with the memory cells provided in at least the two layers are electrically coupled. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008310949(A) 申请公布日期 2008.12.25
申请号 JP20080153155 申请日期 2008.06.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM DOO-GON;PARK KI-TAE;LEE YEONG-TAEK
分类号 G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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