发明名称 Method of forming metal silicide contact and metal interconnect
摘要 Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
申请公布号 US8617992(B2) 申请公布日期 2013.12.31
申请号 US201213427091 申请日期 2012.03.22
申请人 CHANDRA ADITI;KAMATH ARVIND;CLEEVES JAMES MONTAGUE;ROCKENBERGER JOERG;TAKASHIMA MAO;SCHER ERIK;KOVIO, INC. 发明人 CHANDRA ADITI;KAMATH ARVIND;CLEEVES JAMES MONTAGUE;ROCKENBERGER JOERG;TAKASHIMA MAO;SCHER ERIK
分类号 H01L21/44 主分类号 H01L21/44
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